Authors: J. Desai, S. Aboud, P. Chiney, P. Osuch, J. Branlard, S. Goodnick and M. Saraniti
Affilation: IIT/Rush University, United States
Pages: 33 - 36
Keywords: SOI transitor, TeraHerz frequency, PSPICE models
In this work, the design and development of ultra-fast amplifier circuits is investigated using a combination of simulation tools, including PSPICE. A fully depleted SOI transistor is designed based on state-of-the-art fabricated devices. To calibrate the transistor performance, an analysis of the frequency response is conducted using a fullband particle-based simulation tool, and the device is shown to operated in the TeraHertz regeme. The SOI device parameters are then extracted and are used to build a high frequency amplifier circuit in PSPICE. A full analysis of the impact of design parameters on the dc gain, bandwidth and power consumption is performed. The high-frequency limitations in PSPICE are also investigated.