Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

Nano Scale Device Modeling Chapter 2

Impact of Quantum Mechanical Tunnelling on Off-leakage Current in Double-gate MOSFET using a Quantum Drift-diffusion Model
M-A Jaud, S. Barraud and G. Le Carval
CEA-LETI, FR

Methodology for Prediction of Ultra Shallow Junction Resistivities Considering Uncertainties with a Genetic Algorithm Optimization
C. Renard, P. Scheiblin, F. de Crécy, A. Ferron, E. Guichard, P. Holliger and C. Laviron
CEA-LETI, FR

Full-band Particle-based Simulation of Germanium-On-Insulator FETs
S. Beysserie, J. Branlard, S. Aboud, S.M. Goodnick, T. Thornton and M. Saraniti
Illinois Institute of Technology, US

A Technology-Independent Model for Nanoscale Logic Devices
M.P. Frank
University of Florida, US

Hierarchical Simulation Approaches for the Design of Ultra-Fast Amplifier Circuits
J. Desai, S. Aboud, P. Chiney, P. Osuch, J. Branlard, S. Goodnick and M. Saraniti
IIT/Rush University, US

Principles of Metallic Field Effect Transistor (METFET)
S.V. Rotkin and K. Hess
University of Illinois at Urbana-Champaign, Beckman Institute for Advanced Science and Technology, US

Ab Initio Simulation on Mechanical and Electronic Properties of Nanostructures under Deformation
Y. Umeno and T. Kitamura
Kyoto University, JP

Atomistic Process and Simulation in the Regime of sub-50nm Gate Length
O. Kwon, K. Kim, J. Seo and T. Won
Inha University, KR

Sub-Threshold Electron Mobility in SOI-MESFETs
T. Khan, D. Vasileska and T.J. Thornton
Arizona State University, US


ISBN: 0-9728422-8-4
Pages: 519
Hardcopy: $79.95

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