| |
 | Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 8: RF Device Design |
| | Accurate Modeling for RF Silicon MOSFET up to 15 GHz and the Parameter Extraction Methodology | | Authors: | J. Lin, Y. Kiat Seng, M. Jian Guo and D. Manh Anh | | Affilation: | Nanyang Technological University, SG | | Pages: | 380 - 383 | | Keywords: | MOSFET, parameter extraction, small-signal model, subcircuit, RF, S-parameters, Y-parameters, Z-parameters, measure, simulation | | Abstract: | The accurate method to extract a small-signal subcircuit model of MOSFET’s based on BSIM4 is presented, a novel approach to determining the parasitic inductances by Z-parameters, the intrinsic terminal resistance and capacitance by Y-parameters are shown. The procedure of the parameter extraction for RF MOSFET model is discussed and verified by experiment. The excellent correspondence is achieved between the modeled and measured S-parameters up to 15GHz for 0.18um CMOS process technology. |  | View paper | | ISBN: | 0-9728422-1-7 |
| Pages: | 600 |
| Special: | 3 CD Set — 15% off with Free Shipping |
| Up | |
|
| Upcoming Events |
 |
 |
 |
 |
| nanoPRwire™ |
 |
| News Headlines |
 |
|
|
| |
| |
|
| | |
| |
|
|
