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 | Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 7: Compact Modeling |
| | A Unified Environment for the Modeling of Ultra Deep Submicron MOS Transistors | | Authors: | T. Gneiting | | Affilation: | Advanced Modeling Solutions, DE | | Pages: | 368 - 371 | | Keywords: | MOSFET, compact models, model parameter, extraction | | Abstract: | This paper discusses the aspects of modern MOS modeling requirements. Starting fro the fact, that even the Compact Model Council (CMC) outlined BSIM3v3 as a standard MOS simulation mode, many other models are used throughout the semiconductor community. Their common approach is they are all highly scalable to cover a wide range of transistor dimensions. To cover this effect, a strategy for efficient model parameter extraction with a special emphasis on scalability is illustrated. This leads to a software architecture and a data base concept, which enables modeling engineers to handle the parameter extraction for different simulation models from one common measurement base in a very efficient and flexible way. |  | View paper | | ISBN: | 0-9728422-1-7 |
| Pages: | 600 |
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