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 | Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 7: Compact Modeling |
| | A Surface-Potential-Based Extrinsic Compact MOSFET Model | | Authors: | X. Gu, G. Gildenblat, G. Workman, S. Veeraraghavan, S. Shapira and K. Stiles | | Affilation: | Pennsylvania State University, US | | Pages: | 364 - 367 | | Keywords: | MOSFET, compact model, surface potential, extrinsic model | | Abstract: | This work presents the extrinsic part of a recently developed advanced surface-potential-based compact MOSFET model (SP). At present, it includes a novel engineering gate current model, a substrate current model valid in all regions of operation, a physics-based overlap charge model and noise sources. The extrinsic model is developed in a modular form and takes full advantages of the surface-potential-based formulation of SP. It is partially based on the newly developed simplified analytical approximation for the surface potential in the source and drain overlap regions. |  | View paper | | ISBN: | 0-9728422-1-7 |
| Pages: | 600 |
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