Authors: S.B Chiah , X. Zhou and K.Y. Lim
Affilation: Nanyang Technological University, Singapore
Pages: 338 - 341
Keywords: short-/narrow-channel effects, threshold voltage
The objective of this work is to develop a unified geometry-dependent scalable threshold voltage (Vt) model for the entire range of drawn length (L) and drawn width (W) without binning, including reverse short-channel effect (RSCE) and inverse narrow-width effect (INWE). This has been achieved based on the ideas of the previous length-dependent Vt(L) model, which allows the unified Vt model to be extended to both length and width dimensions at various bias conditions.