Authors: X. Zhou, S.B. Chiah and K.Y. Lim
Affilation: Nanyang Technological University, Singapore
Pages: 266 - 269
Keywords: compact model, deep-submicron MOSFETs, scalability, symmetry, technology development
This paper presents new development results of our compact model (Xsim) for deep-submicron MOSFETs. Although a threshold-voltage-based and source-referenced regional model, Xsim meets the basic requirements of continuity (to third-order derivatives), scalability (entire geometry range), and symmetry, with a single-piece unified equation that approaches the ideal long-side-channel expression. Model calibration requires minimum measurement data with one-iteration parameter extraction, which can be extrapolated to predicting characteristics of extremely-scaled devices with severe threshold voltage roll-off, a regime in which most common models do not (or cannot) model.