Authors: A. Bell, K. Singhal and H. Gummel
Affilation: Agere Systems, United States
Pages: 250 - 253
Keywords: MOSFET transistors, inversion charge density, bulk charge, saturation voltage, channel voltage
Compact models need to be carefully designed to predict circuit behavior efficiently, accurately and robustly. A variety of effects must work together and be consistently integrated into the model equations with redundancy. USIM is a compact MOSFET model that has complete symmetry and handles all regions of operation seamlessly. A simple implicit relation for inversion charge is used without the need for calculating the surface potential. No limiting for Vds or unification functions for drift and diffusion current are needed. In USIM, the threshold condition is defined to occur when the normalized inversion charge is unity.