Dutton R., Choi C-H
Stanford University, US
Keywords: CV, DG SOI, gate tunneling, quantum effect
Simulation and modeling of gate tunneling current for thin-oxide MOSFETs and Double-Gate SOIs are discussed. Guidelines for design of leady MOS capacitors are proposed. Resonant gate tunneling current in DG SOI is simulated, based on quantum-mechanical models, and shown to be an issue of growing concern.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 242 - 245
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9728422-1-7