Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Chapter 7:

Compact Modeling

-Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack
 R. Dutton and C-H Choi
 Stanford University, US
-A Basic Property of MOS Transistors and its Circuit Implications
 E. Vittoz, C. Enz and F. Krummenacher
 Swiss Center for Electronics & Microtechnology, CH
-USIM Design Considerations
 A. Bell, K. Singhal and H. Gummel
 Agere Systems, US
-Theory, Development and Applications of the Advanced Compact MOSFET (ACM) Model
 C. Galup-Montoro, M.C. Schneider, A.I.A. Cunha and O.C. Gouveia-Filho
 Universidade Federal de Santa Catarina, BR
-HiSIM: Accurate Charge Modeling Important for RF Era
 M. Miura-Mattausch, D. Navarro, H. Ueno, H.J. Mattausch, K. Morikawa, S. Itoh, A. Kobayashi and H. Masuda
 Hiroshima University, JP
-An Advanced Surface-Potential-Plus MOSFET Model
 J. He, X. Xi, M. Chan, A. Niknejad and C. Hu
 University of California at Berkeley, US
-A Technology-based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization
 X. Zhou, S.B. Chiah and K.Y. Lim
 Nanyang Technological University, SG
-A Framework for Generic Physics Based Double-Gate MOSFET Modeling
 M. Chan, Y. Taur, C.H. Lin, J. He, A. Niknejad and C. Hu
 Hong Kong University of Science & Technology, HK
-A Physics-Based Compact Model for Nano-Scale DG and FD/SOI MOSFETs
 J. Fossum, L. Ge and M-H Chiang
 University of Florida, US
-BJT Modeling with VBIC, Basics and V1.3 Updates
 C. McAndrew, T. Bettinger, L. Lemaitre and M. Tutt
 Motorola, US
-Compact Bipolar Transistor Modeling - Issues and possible solutions
 M. Schroter
 University of Technology Dresden, DE
-Noise Modeling with MOS Model 11 for RF-CMOS Applications
 A.J. Scholten, L.F. Tiemeijer, R. van Langevelde, R.J. Havens, A.T.A. Zegers-van Duijnhoven, V.C. Venezia and D. Klaassen
 Philips Research Laboratories Eindhoven, NE
-Physical Modeling of Substrate Resistance in RF MOSFETs
 J. Han, M. Je and H. Shin
 Korea Advanced Institute of Science & Technology, KR
-Compact Modeling for RF and Microwave Integrated Circuits
 A.M. Niknejad, M. Chan, C. Hu, B. Brodersen, J. Xi, J. He, S. Emami, C. Doan, Y. Cao, P. Su, H. Wan, M. Dunga and C.H. Lin
 University of California at Berkeley, US
-Vector Potential Equivalent Circuit for Efficient Modeling of Interconnect Inductance
 A. Pacelli
 SUNY-Stony Brook, US
-A Physics-Based Analytical Surface Potential and Capacitance Model of MOSFET's Operation from the Accumulation to Depletion Region
 J. He, X. Xi, M. Chan, K. Cao, A. Niknejad and C. Hu
 University of California, Berkeley, US
-Modeling of Direct Tunneling Current in Multi-Layer Gate Stacks
 M.V. Dunga, X. Xi, J. He, I. Polishchuk, Q. Lu, M. Chan, A. Niknejad and C. Hu
 University of California, Berkeley, US
-Substrate Current in Surface-Potential-Based Compact MOSFET Models
 X. Gu, H. Wang, T.L. Chen and G. Gildenblat
 Penn State University, US
-Application of Genetic Algorithm to Compact Model Parameter Extraction
 X. Cai, H. Wang, X. Gu, G. Gildenblat and P. Bendix
 Penn State University, US
-A Surface-Potential-Based Compact Model of NMOSFET Gate Tunneling Current
 X. Gu, H. Wang, G. Gildenblat, G. Workman, S. Veeraraghavan, S. Shapira and K. Stiles
 Penn State University, US
-Gate Current Partitioning in MOSFET Models for Circuit Simulation
 Q. Ngo, D. Navarro, T. Mizoguchi, S. Hosakawa, H. Ueno, M. Miura-Mattausch and C.Y. Yang
 Santa Clara University, US
-Double-Gate CMOS Evaluation for 45nm Technology Node
 M-H Chiang, J.X. An, Z. Krivokapic and B. Yu
-Primary Consideration on Compact Modeling of DG MOSFETs with Four-terminal Operation Mode
 T. Nakagawa, T. Sekigawa, T. Tsutsumi, E. Suzuki and H. Koike
 Electroinformatics Group, AIST, JP
-A Compact Model Methodology for Device Design Uncertainty
 R. Williams, J. Watts, M-H Na, K. Bernstein
 Internatoinal Business Machines Corporation, US
-Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects
 S.B Chiah , X. Zhou and K.Y. Lim
 Nanyang Technological University, SG
-Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs
 S.B Chiah , X. Zhou and K.Y. Lim
 Nanyang Technological University, SG
-An Interactive Website as a Tool for CAD of Power Circuits
 B. Swiercz, L. Starzak, M. Zubert and A. Napieralski
 Technical University of Lodz, PL
-Multidimensional Model-Based Parameter Estimation Method for Compact Modeling of High-Speed Interconnects
 T. Dhaene
 University of Antwerp, BE
-An Automatic Macro Program developed for Characterization, Parameter Extraction and Statistic Analysis of Spiral Inductors
 G.W. Huang, D.Y. Chiu and K.M. Chen
 National Nano Device Laboratories, TW
-Unified RLC Model for On-Chip Interconnects
 S-P. Sim and C. Yang
 Santa Clara University, US
-Compact Modling of High Frequency Phenomena for On-Chip Spiral Inductors
 N. Talwalkar, P. Yue and S. Wong
 Stanford University, US
-A Surface-Potential-Based Extrinsic Compact MOSFET Model
 X. Gu, G. Gildenblat, G. Workman, S. Veeraraghavan, S. Shapira and K. Stiles
 Pennsylvania State University, US
-A Unified Environment for the Modeling of Ultra Deep Submicron MOS Transistors
 T. Gneiting
 Advanced Modeling Solutions, DE
-Standardization of Compact Device moding in High Level Description Language
 L. Lemaitre, C. McAndrew and W. Grabinski
 Motorola, CH
-Changing the Paradigm for Compact Model Integration in Circuit Simulators Using Verilog-A
 M. Mierzwinsk, P.O. Halloran, B. Troyanovsky and R. Dutton
 Tiburon Design Automation, Inc., US
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