Ahmed S.S., Vasileska D.
Arizona State University, US
Keywords: 3D Monte Carlo simulation, effective potential, narrow-channel effects, SOI devices, threshold voltage shift
We investigate the role of quantum-mechanical size-quantization effects in narrow-width SOI devices. In these structures, carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide interface. This results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. We use the effective potential approach in conjunction with a 3D MC particle-based simulator. We find ~300 mV shift in the threshold voltage that depends on the channel width and gives rise to approximately 40% degradation of the on-state current.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 222 - 225
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9728422-1-7