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 | Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 5: Quantum Effects, Quantum Devices and Spintronics |
| | Direct Source to Drain Tunnelling and its Impact on the Intrinsic Parameter Fluctuations in Nanometer Scale Double Gate MOSFETs | | Authors: | J.R. Watling, A. Asenov, A.R. Brown, A. Svizhenko and M.P. Anantram | | Affilation: | University of Glasgow, UK | | Pages: | 202 - 205 | | Keywords: | double gate MOSFET, fluctuations, source-to-drain tunnelling, density gradient | | Abstract: | We have calibrated quantum density gradient simulator against Non-Equilibrium Greens Functions simulator, to investigate the effect of source-drain tunnelling on intrinsic parameter fluctuations such as line edge roughness, atomistic doping in the source and drain and trapped charge in the undoped channel of sub 10nm double-gate MOSEFTs as require by the Silicon roadmap. |  | View paper | | ISBN: | 0-9728422-1-7 |
| Pages: | 600 |
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