Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Chapter 5:

Quantum Effects, Quantum Devices and Spintronics

-Quantum Computation with Persistent-current Aharonov-Bohm Qubits and Qugates
 I.O. Kulik
 Bilkent University, TR
-Transition of the Ground State in a Coupled N-layer Quantum Dot
 W. Xie
 Guangzhou University, CN
-RAM Design Using Quantum-Dot Cellular Automata
 K. Walus, A. Vetteth, G.A. Jullien and V.S. Dimitrov
 ATIPS Laboratory, CA
-Conductance of a Disordered Double Quantum Wire in a Magnetic Field: Boundary roughness scattering
 S.C. Arapan, S.V. Korepov, M.A. Liberman and B. Johansson
 Uppsala University, SE
-Switching Dynamics of Double Barrier Josephson Junction Based Qubit Gate
 S.E. Shafraniuk, I.P. Nevirkovets and J. Ketterson
 Northwestern University, US
-Quantum-like Computation and "Thinking" Based on Classical Oscillations
 Y.F. Orlov
 Cornell University, US
-Critical Current Oscillations versus Pureness of Superconductor-ferromagnet Nanoscopic Multilayers
 S.E. Shafranjuk and J. Ketterson
 Northwestern University, US
-A Computational Investigation of Electron Energy States for Vertically Coupled Semiconductor Quantum Dots
 Y. Li and H-M. Lu
 National Nano Device Laboratories and National Chiao Tung University, TW
-Nanocomputer Systems Engineering
 M.P. Frank
 University of Florida, US
-Strain Effect on the Final State Density-of-State for Hole Scattering in Silicon
 K. Matsuda, H. Nakatsuji and Y. Kamakura
 Naruto University of Education, JP
-Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering
 H. Kosina, M. Nedjalkov and S. Selberherr
 Institute for Microelectronics, TU Vienna, AT
-Quantum-Classical Transition Induced by Electrical Measurement
 D. Mozyrsky and I. Martin
 Los Alamos National Laboratory, US
-Initial State Preparation and Stability in Narrow Band-Gap Semiconductor Qubits
 M.J. Gilbert, R. Akis, D.K. Ferry
 Arizona State University, US
-Direct Source to Drain Tunnelling and its Impact on the Intrinsic Parameter Fluctuations in Nanometer Scale Double Gate MOSFETs
 J.R. Watling, A. Asenov, A.R. Brown, A. Svizhenko and M.P. Anantram
 University of Glasgow, UK
-Electronic Properties and Transport in Silicon Nanowires
 I.P. Batra, T. Ciani, D. Boddupalli and L. Soberano
 University of Illinois at Chicago, US
-A Quantum Waveguide Array Generator For Performing Fourier Transforms
 R. Akis and D.K. Ferry
 Arizona State University, US
-Quantum and Kinetic Simulation Tools for Nano-scale Electronic Devices
 A. Fedoseyev, V. Kolobov, R. Arslanbekov, A. Przekwas and A. Balandin
 CFD Research Corporation,, US
-Quantum mechanical effects correction models for inversion charge and I-V characteristics of the MOSFET device
 H. Abebe and E. Cumberbatch
 MOSIS, US
-Threshold Voltage Shifts in Narrow-Width SOI Devices Due to Quantum Mechanical Size-Quantization Effects
 S.S. Ahmed and D. Vasileska
 Arizona State University, US
-Theory of Spin Transport in an n-typed GaAs Quantum Well
 M.W. Wu and M.Q. Weng
 Univ. of Science & Technology of China, CN
ISBN:0-9728422-1-7
Pages:600
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