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 | Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 4: Nano Electronics |
| | Background Charge Insensitive Single-Electron Memory Devices | | Authors: | K. Yadavalli, A. Orlov, G. Snider, K. Likharev and A. Korotkov | | Affilation: | University of Notre Dame, US | | Pages: | 141 - 144 | | Keywords: | single-electron memory, Nordheim-Fowler tunneling | | Abstract: | In a Single-Electron Memory Cell (SEMC) one bit of information is represented by the excess or shortfall of a small (¡_1) number of electrons on the floating gate (FG). We present experimental results on the all-metallic FG memory devices fabricated using aluminum tunnel junction technology [3] with variable barrier separating FG and its control gate (CG). We report the operation of SEMC in one electron mode.Experimental results are compared with calculations and a very good match is observed. We discuss several regimes of SEMC operation and various methods to improve the performance of this type of memory. |  | View paper | | ISBN: | 0-9728422-1-7 |
| Pages: | 600 |
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