Nano Scale Device Modeling

	Nanotech 2003 Vol. 2 Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2 Chapter 3: Nano Scale Device Modeling
-	Process Modeling Based on Atomistic Understanding for State of the Art CMOS Device Design
	S. Chakravarthi, M. Diebel, P.R. Chidambaram, S. Ekbote, S.T. Dunham, C.F. Machala and S. Johnson
	Texas Instruments, US
-	Practical Atomistic Dopant Diffusion Simulation of Shallow Junction Fabrication Processes and Intrinsic Fluctuations for sub-100nm MOSFETs
	M. Hane, T. Ezaki and T. Ikezawa
	NEC Corporation, JP
-	Study of Alloy Disorder in Quantum Dots through Multi-million Atom Simulations
	G. Klimeck, F. Oyafuso, T.B. Boykin, R.C. Bowen and P. von Allmen
	NASA, Jet Propulsion Laboratory, US
-	Merging Atomistic and Continuum Simulations of Silicon Technology - The Best from the Two Worlds
	P. Pichler
	Fraunhofer Institute for Integrated Circuits, DE
ISBN:	0-9728422-1-7
Pages:	600
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