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 | Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 1: Semiconductors |
| | Modelling of Gain Control in SiGe HBTs and Si Bipolar Transistors by Ge Incorporation in the Polysilicon Emitter | | Authors: | V.D. Kunz, C.H. de Groot, I.M. Anteney, A.I. Abdul-Rahim, S. Hall, P.L.F. Hemment, Y. Wang and P. Ashburn | | Affilation: | University of Southampton, UK | | Pages: | 16 - 19 | | Keywords: | polySiGe emitter, bipolar transistor, gain control | | Abstract: | In SiGe HBTs high values of fT are achieved by using aggressive Ge profiles in the base. A side effect is very high gains, which can lead to a degradation of BVCEO. This paper investigates Ge incorporation in polysilicon emitters to give gain control independent of the base Ge profile. A model is developed illustrating the reduced gain from Ge incorporation and increased gain from the interfacial oxide layer. |  | View paper | | ISBN: | 0-9728422-1-7 |
| Pages: | 600 |
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