Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Chapter 1:


-Monte Carlo and Energy Balance Simulations of a Deep Sub-micrometer Conventional and Asymmetric MOSFET Device Structures
 A. Mannargudi and D. Vasileska
 Arizona State University, US
-Single Transistor AND Gate
 V. Chengalvala and Y. Zhang
 Oklahoma State University, US
-Simulation of Device-Structure Dependence of Surface-Related Kink Phenomena in GaAs FETs
 A. Wakabayashi, Y. Kazami, J. Ozawa, Y. Mitani and K. Horio
 Shibaura Institute of Technology, JP
-Nanoscale Control of Light-induced Degradation in Amorphous Silicon
 K. Shirai, Y. Yamazaki, H. Katayama-Yoshida
 ISIR, Osaka University, JP
-Modelling of Gain Control in SiGe HBTs and Si Bipolar Transistors by Ge Incorporation in the Polysilicon Emitter
 V.D. Kunz, C.H. de Groot, I.M. Anteney, A.I. Abdul-Rahim, S. Hall, P.L.F. Hemment, Y. Wang and P. Ashburn
 University of Southampton, UK
-Lateral-Cavity Design for Long-Wavelength Vertical-Cavity Lasers
 J. Piprek, A. Bregy, V. Jayaraman, Y-J Chiu and J. Bowers
 University of California, US
-Semi-Analytic Boltzmann Model for the Substrate Current of Short-Channel MOSFETs with Lightly Doped Drains
 H.C. Morris and M.M. De Pass
 San Jose State University, US
-Fullband Particle-based Simulation of Optical Excitation in Silicon Pin Diodes.
 S. Wigger-Aboud, M. Saraniti, S. Goodnick, A. Brodschelm and A. Leitenstorfer
 Rush Medical Center and Illinois Institute of Technology, US
-A Methodology of Field-Emission Modeling with Space-Charge Effects
 T-H Tsai, H-K Tang and Y-J Yang
 National Taiwan University, TW
-Coupled Multiphysics Modeling of Semiconductor Lasers
 Z. Sikorski, Y. Jiang, T. Czyszanowski, A. Przekwas and M. Turowski
 CFD Research Corporation, US
-A Study on Growth of Ultrathin Silicon Dioxide Films by Rapid Thermal Oxidation
 T. Zeng and H.C. Doumanidis
 North Carolina State University, US
-Optical Characteristics of InAs Quantum Dots influenced by AlGaAs/GaAs Superlattice Barriers
 H. Choi, Y. Jeong, Y. Park, J. Lee, J-Y Leem and M. Jeon
 Inje University, KR
-An Energy Transport Gate Current Model Accounting for a Non-Maxwellian Energy Distribution
 A. Gehring, T. Grasser, H. Kosina and S. Selberherr
 Institute for Microelectronics, Vienna, AT
-Carrier Transit Time Optimization of a High Speed Bipolar Transistor Using Numerical Device Simulation
 G.H. Loechelt, J. Sellers, J. Morgan and M. Azam
 ON Semiconductor, US
-Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale PMOSFETs
 C.D. Nguyen, C. Jungemann, B. Neihues, B. Meinerzhagen, J. Sedlmeir and W. Molzer
 ITEM-University of Bremen, DE
-High Speed Extraction of Process Model Parameters for 70nm Technology using a Distributed Genetic Algorithm
 M. Murakawa, Y. Oda, H. Amakawa, S. Baba, T. Higuchi and K. Nishi
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