Nano Science and Technology Institute - NSTI  
Nano Science and Technology Institute   Home | Subscribe | Site Map  
  ABOUT | COURSES | EVENTS | PUBLICATIONS | LEADERSHIP | OUTREACH | NEWS | PRESS | JOBS | Nanotechnology Solutions
px
px fade_top
Publications
Nanotech 2008 CDROM
Nanotech 2007 CDROM
Nanotech 2006 CDROM
Nanotech 2005 CDROM
Nanotech 2004 CDROM
3 CDROM Special Offer
Nanotech 2008 Vol. 1
Nanotech 2008 Vol. 2
Nanotech 2008 Vol. 3
Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 2
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 4
Nanotech 2006 Vol. 1
Nanotech 2006 Vol. 2
Nanotech 2006 Vol. 3
Nanotech 2005 Vol. 1
Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 3
WCM 2005
Nanotech 2004 Vol. 1
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 3
Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 3
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 2
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 2
MSM 2000
MSM 99
MSM 98
Index of Authors
Index of Keywords
Index of Affiliations
Library Request Form
Shopping Cart
Order Form
 
Publications Publications
Nanotech 2003 Vol. 1
p
 
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 1
Nanotech 2003 Vol. 1
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 1
 
Chapter 13: Wafer and MEMS Processing
 

A Fluoro-ethoxysilane-Based Stiction-Free Release Process for Submicron Gap MEMS

Authors:B. Parvais, A. Pallandre, A.M. Jonas and J-P Raskin
Affilation:Université catholique de Louvain, BE
Pages:522 - 525
Keywords:stiction, SAM, MEMS
Abstract:Nowadays, stiction remains one of the biggest reliability problems in the fabrication of micro-electromechanical systems (MEMS), especially when a small gap is used. To avoid the adhesion, a Self-Assembled Monolayer (SAM) can be coated. Main research in that field focuses on aliphatic chloro-silanes. We developed a novel wet-release CMOS compatible process for the fabrication of surface-micromachined beam using a perfluorated SAM. Uniform 9 Å thick monolayers were observed. A static contact angle of 121° was measured. Furthermore, a complete 1 µm thick (gap 0.5 µm) polysilicon RF MEMS capacitor with aluminium interconnects realized with this process demonstrated the CMOS compatibility.
A Fluoro-ethoxysilane-Based Stiction-Free Release Process for Submicron Gap MEMSView paper
ISBN:0-9728422-0-9
Pages:560
Hardcopy:$125.00
Special:3 CD Set — 15% off with Free Shipping
Up
nanoPRwire™
nanoPRwire
News Headlines
nano World news
 
 
 
 
px
© Nano Science and Technology Institute     About NSTI | Terms of Use | Privacy Policy | Contact