A Compact Model for an IC Lateral Diffused MOSFET Using the Lumped-Charge Methodology
Authors:
Y. Subramanian, P.O. Lauritzen and K.R. Green
Affilation:
Texas Instruments, U.S.A.
Pages:
284 - 288
Keywords:
LDMOS Model, Lumped-Charge, Power, MOSFET
Abstract:
A compact model for an IC Lateral Diffused MOSFET is developed using the Lumped-Charge Methodology[1]. Model equations and key performance characteristics are documented. They satisfy the requirements of Power MOSFET models[2], unlike the competitive macromodels developed from short-channel, low-power MOSFET models.
