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 | MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Chapter 4: Process Modeling |
| | A Novel Method to Utilize Existing TCAD Tools to Build Accurate Geometry Required for MEMS Simulation | | Authors: | N.M. Wilson, S. Liang, P.M. Pinsky and R.W. Dutton | | Affilation: | Stanford University, U.S.A. | | Pages: | 120 - 123 | | Keywords: | micro-electro-mechanical systems (MEMS), geometry, process simulation | | Abstract: | This paper details a technique that exploits domain decom-position and utilizes a combination of 1-D, 2-D, and 3-D process simulation to build physically accurate geometry of micro-electro-mechanical systems (MEMS) for simula-tion. The size and aspect ratios of typical MEMS structures differ significantly from those traditionally found in the VLSI community. This spatial stiffness makes it difficult to construct a geometry model using standard process simula-tion tools. The domain decomposition technique is an auto-mated process that uses process flow, mask layouts, and a set of heuristics to determine which regions on the wafer require 1-D, 2-D, and 3-D simulation. The appropriate order of simulation is then performed and the results are automatically combined to create a useful geometry which can be used for simulation of behavior. |  | View paper | | ISBN: | 0-9666135-4-6 |
| Pages: | 697 |
| Hardcopy: | $100.00 |
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