Nano Science and Technology Institute - NSTI  
Nano Science and Technology Institute   Home | Subscribe | Site Map  
  ABOUT | COURSES | EVENTS | PUBLICATIONS | LEADERSHIP | OUTREACH | NEWS | PRESS | JOBS | Nanotechnology Solutions
px
px fade_top
Publications
Nanotech 2008 CDROM
Nanotech 2007 CDROM
Nanotech 2006 CDROM
Nanotech 2005 CDROM
Nanotech 2004 CDROM
3 CDROM Special Offer
Nanotech 2008 Vol. 1
Nanotech 2008 Vol. 2
Nanotech 2008 Vol. 3
Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 2
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 4
Nanotech 2006 Vol. 1
Nanotech 2006 Vol. 2
Nanotech 2006 Vol. 3
Nanotech 2005 Vol. 1
Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 3
WCM 2005
Nanotech 2004 Vol. 1
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 3
Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 3
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 2
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 2
MSM 2000
MSM 99
MSM 98
Index of Authors
Index of Keywords
Index of Affiliations
Library Request Form
Shopping Cart
Order Form
 
Publications Publications
MSM 99
p
 
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
 
Chapter 4: Process Modeling
 

Mask-Layout Synthesis Through an Evolutionary Algorithm

Authors:H. Li and E.K. Antonsson
Affilation:California Institute of Technology, U.S.A.
Pages:113 - 116
Keywords:MEMS, design, synthesis, genetic algorithm, bulk wet etching
Abstract:An automatic method for synthesizing MEMS mask-lay-outs is presented. This method uses evolutionary algorithm techniques to optimize the mask-layouts for a forward simu-lation of fabrication. Initially, a random population of mask-layouts is generated. The fabrication of each layout is sim-ulated through a digital process simulator to produce a 3D fabricated shape, which is compared to a user-specified desired shape. Each evolutionary loop governs the stochastic searching behavior such that the mask-layouts whose simu-lated shapes are closer to the desired shape are more likely to survive. More importantly, the ģbetterī masks are more likely to be evolved among those survived mask-layouts for the next loop. Through such evolutionary iterations, a near global ģoptimumī mask-layout is likely to be found. A test loop is constructed for the bulk wet etching mask synthesis by incorporating a 3D wet etching simulator. The current emerging results demonstrate the feasibility of this approach to mask-layout synthesis.
Mask-Layout Synthesis Through an Evolutionary AlgorithmView paper
ISBN:0-9666135-4-6
Pages:697
Hardcopy:$100.00
Special:3 CD Set — 15% off with Free Shipping
Up
nanoPRwire™
nanoPRwire
News Headlines
nano World news
 
 
 
 
px
© Nano Science and Technology Institute     About NSTI | Terms of Use | Privacy Policy | Contact