Tesluk V., Korbetskyy O.
Lvov Polytechnic, UA
Keywords: diffusion, numerical simulation of IC process, oxidation, route, step, transition
A technological process of the VLSI fabrication constantly improves. In such conditions, new technology and constructive problems appear when making IC with submicron sizes. Decision for these problems is possible only by using CAD tools, particlarly mathematical modeling. It allows considerably to accelerate a process of the integrated devices design and reduce expenses on the technological complete of the silicon IC’s fabrication routes.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 99 - 101
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-4-6