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 | MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Chapter 12: Semiconductor Device Modeling |
| | Measuring and Characterizing Sub-Micron Short Channel LDD MOSFETs | | Authors: | P.C. Liu and H. Lin | | Affilation: | Nanyang Technological University, Singapore | | Pages: | 439 - 442 | | Keywords: | modeling, lightly doped drain, LDD, effective channel length, source and drain series resistance | | Abstract: | An efficient model for accurate predication of the I-V characteristics of submicrometer LDD MOSFET is described in this paper. The model is based on n-th power law model[1] by treating the effective electrical channel length and source-drain external resistance as gate bias dependent in the LDD MOSFET. On the other hand, our experiment shows that the channel length modulation (VBS=0v) also to be gate-bias dependent. Through these improvement: gate-bias dependent, and remodeled, comparison between the measured and modeled I-V characteristics shows excellent agreement for a wide range of channel lengths and biases |  | View paper | | ISBN: | 0-9666135-4-6 |
| Pages: | 697 |
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