| |
 | MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Chapter 12: Semiconductor Device Modeling |
| | A New Analytical Energy Relaxation Time Model for Device Simulation | | Authors: | V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez and S. Selberherr | | Affilation: | TU Vienna, Austria | | Pages: | 395 - 398 | | Keywords: | energy relaxation time, simulation, models, compounds, devices | | Abstract: | We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed as functions of the carrier and lattice temperatures, and in the case of semiconductor alloys, of the material composition. |  | View paper | | ISBN: | 0-9666135-4-6 |
| Pages: | 697 |
| Special: | 3 CD Set — 15% off with Free Shipping |
| Up | |
|
| Upcoming Events |
 |
 |
 |
 |
| nanoPRwire™ |
 |
| News Headlines |
 |
|
|
| |
| |
|
| | |
| |
|
|
