Nano Science and Technology Institute
MSM 99
MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems

Chapter 12:

Semiconductor Device Modeling

-Modelling an NMR Probe for Magnetometry
 G. Boero, D. Schlaefli, P.A. Besse and R.S. Popovic
 Swiss Federal Institute of Technology, CH
-A New Analytical Energy Relaxation Time Model for Device Simulation
 V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez and S. Selberherr
 TU Vienna, AT
-Impact of Heat Source Localization on Conduction Cooling of Silicon-on-Insulator Devices
 P.G. Sverdrup, Y.S. Ju and K.E. Goodson
 Stanford University, US
-Offset Analysis in CMOS Magnetotransistors by Numerical Simulation
 M. Metz and H. Baltes
 ETH Zürich, CH
-Simulation of the Frequency Limits of SiGe HBTs
 J. Geßner, F. Schwierz, H. Mau, D. Nuernbergk, M. Roßberg and D. Schipanski
 Technische Universitat Ilmenau, DE
-Closed-Loop MOSFET Doping Profile Optimization for Portable Systems
 M. Stockinger, R. Strasser, R. Plasun, A. Wild and S. Selberherr
 TU Vienna, AT
-Three-Dimensional Multi-Grid Poisson Solver for Modeling Semiconductor Devices
 S.J. Wigger, M. Saraniti and S.M. Goodnick
 Arizona State University, US
-Simulation of the Piezo-Tunnel Effect
 A.P. Friedrich, P.A. Besse, M. Bächtold and R.S. Popovic
 Swiss Federal Institute of Technology of Lausanne, CH
-A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage Modeling
 K.Y. Lim, X. Zhou and D. Lim
 Nanyang Technological University, SG
-Structure Optimization of 140 GHz Pulsed-Mode IMPATT Diode
 A. Zemliak, C. Celaya and R. Garcia
 Puebla Autonomous University, MX
-Implementation of Strain Induced Effects in Sensor Device Simulation
 K. Matsuda and Y. Kanda
 Naruto University of Education, JP
-Self Aligned Gate JFETs for Smart MEMS
 S. Amon, D. Vrtacnik, D. Resnik, D. Krizaj, U. Aljancic and A. Levstek
 University of Ljubljana, SI
-Measuring and Characterizing Sub-Micron Short Channel LDD MOSFETs
 P.C. Liu and H. Lin
 Nanyang Technological University, SG
-Modelling High Built-In Electric Field Effects on Generation-Recombination Rates in Space-Charge Regions of pn a-Si:H Junctions
 J. Furlan, Z. Gorup, F. Smole and M. Topic
 University of Ljublijana, SI
-An Analytical Field Effect Mobility Model of N- and P-Channel Poly-Si TFTs
 J. Kung
 National Lienho College of Technology and Commerce, TW
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