Semiconductor Device Modeling

	MSM 99 Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems Chapter 12: Semiconductor Device Modeling
-	Modelling an NMR Probe for Magnetometry
	G. Boero, D. Schlaefli, P.A. Besse and R.S. Popovic
	Swiss Federal Institute of Technology, CH
-	A New Analytical Energy Relaxation Time Model for Device Simulation
	V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez and S. Selberherr
	TU Vienna, AT
-	Impact of Heat Source Localization on Conduction Cooling of Silicon-on-Insulator Devices
	P.G. Sverdrup, Y.S. Ju and K.E. Goodson
	Stanford University, US
-	Offset Analysis in CMOS Magnetotransistors by Numerical Simulation
	M. Metz and H. Baltes
	ETH Zürich, CH
-	Simulation of the Frequency Limits of SiGe HBTs
	J. Geßner, F. Schwierz, H. Mau, D. Nuernbergk, M. Roßberg and D. Schipanski
	Technische Universitat Ilmenau, DE
-	Closed-Loop MOSFET Doping Profile Optimization for Portable Systems
	M. Stockinger, R. Strasser, R. Plasun, A. Wild and S. Selberherr
	TU Vienna, AT
-	Three-Dimensional Multi-Grid Poisson Solver for Modeling Semiconductor Devices
	S.J. Wigger, M. Saraniti and S.M. Goodnick
	Arizona State University, US
-	Simulation of the Piezo-Tunnel Effect
	A.P. Friedrich, P.A. Besse, M. Bächtold and R.S. Popovic
	Swiss Federal Institute of Technology of Lausanne, CH
-	A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage Modeling
	K.Y. Lim, X. Zhou and D. Lim
	Nanyang Technological University, SG
-	Structure Optimization of 140 GHz Pulsed-Mode IMPATT Diode
	A. Zemliak, C. Celaya and R. Garcia
	Puebla Autonomous University, MX
-	Implementation of Strain Induced Effects in Sensor Device Simulation
	K. Matsuda and Y. Kanda
	Naruto University of Education, JP
-	Self Aligned Gate JFETs for Smart MEMS
	S. Amon, D. Vrtacnik, D. Resnik, D. Krizaj, U. Aljancic and A. Levstek
	University of Ljubljana, SI
-	Measuring and Characterizing Sub-Micron Short Channel LDD MOSFETs
	P.C. Liu and H. Lin
	Nanyang Technological University, SG
-	Modelling High Built-In Electric Field Effects on Generation-Recombination Rates in Space-Charge Regions of pn a-Si:H Junctions
	J. Furlan, Z. Gorup, F. Smole and M. Topic
	University of Ljublijana, SI
-	An Analytical Field Effect Mobility Model of N- and P-Channel Poly-Si TFTs
	J. Kung
	National Lienho College of Technology and Commerce, TW
ISBN:	0-9666135-4-6
Pages:	697
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