Nano Science and Technology Institute
MSM 98
MSM 98
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems

Chapter 9:

Applications: Semiconductors

-The Influence of Space Quantization Effect on the Threshold Voltage, Inversion Layer and Total Gate Capacitance in Scaled Si-MOSFETs
 D. Vasileska and D.K. Ferry
 Arizona State University, US
-Concurrent Process, Device and Integrated Circuit Development by Predictive Engineering for Smart Power Technologies
 M. Bafleur, T. Dinh, H. Park, R. Thoma, T. Zirkle and A. Wild
 LAAS/CNRS, FR
-Simulations of a New CMOS Compatible Method to Enhance the Breakdown Voltage of Highly-Doped Shallow PN Junctions
 A. Pauchard, P.A. Besse and R.S. Popovic
 EPFL, CH
-Hierarchical Approach to Simulation in a Vertical System for the TriCore Microcontroller
 C. Salzmann, E. Chesters, P. Coelho, Y-C Fu, J. Madala, M. Reddy and F. Wang
 Siemens Microelectronics, Inc., US
-A Physics-Based Characterized Model for an Ultrafast Planar Rectifier
 Z. Hossain, W. Fragale, W. Simpson and G. Dashney
 Motorola, Inc., US
-Cellular Automata Studies of Vertical MOSFETs
 M. Saraniti, S. Wigger, G. Zandler, G. Formicone and S.M. Goodnick
 Arizona State University, US
-Simulation of Narrow-Width Effects in Sub-Half-Micron n-MOSFETs with LOCOS Isolation
 K.V. Loiko, I.V. Peidous, H-M Ho and D.H. Lim
 Chartered Semiconductor Manufacturing Ltd., SG
-Breakdown in the Output Characteristics of Deep Submicron, a-Si:H TFTs
 L. Colalongo, M. Valdinoci, G. Forunato, L. Mariucci and M. Rudan
 University of Bologna, IT
ISBN:0-96661-35-0-3
Pages:678
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