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 | MSM 98
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Chapter 5: Characterization, Parameter Extraction, Calibration |
| | 1/f Noise Characterization of a Surface-Micromachined Suspended Gate FET | | Authors: | H. Fu, M.L. Kniffin, G. Watanabe, M.P. Masquelier and J. Whitfield | | Affilation: | Motorola, Inc., U.S.A. | | Pages: | 186 - 189 | | Keywords: | 1/f noise, depletion mode NMOS, surfacemicromachined suspended gate FET | | Abstract: | This paper presents the first detailed characterization and modeling of 1/f noise in a depletion mode surface-micromachined suspended gate nMOSFET. The results are compared and contrasted with the 1/f noise characteristics of a standard depletion mode nMOSFET. Due to the depletion mode nature of both surfacemicromachined suspended gate FET and standard FET, 1/f noise decreases as the gate bias approaches to tne tbreshold voltage. 1/f noise component can be modeled using the standard SPICE type of equation. The derived model can be used directly in the optimization of suspended gate transducer design. |  | View paper | | ISBN: | 0-96661-35-0-3 |
| Pages: | 678 |
| Hardcopy: | $100.00 |
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