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 | MSM 98
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Chapter 5: Characterization, Parameter Extraction, Calibration |
| | Characterization of Electrostatically-Actuated Beams Through Capacitance-Voltage Measurements and Simulations | | Authors: | E.K. Chan, K. Garikipati, Z.K. Hsiau and R.W. Dutton | | Affilation: | Stanford University, U.S.A. | | Pages: | 180 - 185 | | Keywords: | electrostatically-actuated beams, capacitancevoltage, contact, simulation accuracy | | Abstract: | Detailed 2D electromechanical simulations of electrostatically-actuated beams reveal phenomena not captured by 1D or quasi-2D simulations. The behavior of the beam when in contact with a dielectric layer is studied. Capacitance-voltage measurements are used to extract material properties and explore surface phenomena such as charge accumulation, stiction and surface roughness. Monte Carlo simulations reveal the limits of simulation accuracy due to statistical distributions of input parameters. |  | View paper | | ISBN: | 0-96661-35-0-3 |
| Pages: | 678 |
| Hardcopy: | $100.00 |
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