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 | MSM 98
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Chapter 2: Bulk and Topography Processing |
| | Modeling Image Formation in Layered Structures: Application to X-ray Lithography | | Authors: | S.B. Bollepalli, M. Khan and F. Cerrina | | Affilation: | UW-Madison, U.S.A. | | Pages: | 53 - 58 | | Keywords: | Angular Spectrum, Diffraction, Defects, Fluorescence, X-ray Lithography. | | Abstract: | In the fabrication of semiconductor devices using lithography, the modeling of the exposure process is very often needed. The elements of a typical exposure system from a modeling perspective comprise of a radiation source, a patterned mask and a wafer coated with a photo-resist. The diffracted image of the mask pattern exposes the photo-resist after propagating through a distance termed mask-to-lvafer gap. The exposed wafer is later on chemically developed to form a semiconductor device. In short, the electric field propagates through a series of regions (layers) with various materials and topographies (structures) before forming an image on the wafer. In this paper we describe a computational algorithm based on angular spectrum propagation approach to model image formation in layered structures with particular emphasis to X-ray Lithography (XRL). Several illustrative examples will be presented. |  | View paper | | ISBN: | 0-96661-35-0-3 |
| Pages: | 678 |
| Hardcopy: | $100.00 |
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