Nano Science and Technology Institute - NSTI  
Nano Science and Technology Institute   Home | Subscribe | Site Map  
  ABOUT | COURSES | EVENTS | PUBLICATIONS | LEADERSHIP | OUTREACH | NEWS | PRESS | JOBS | Nanotechnology Solutions
px
px fade_top
Publications
Nanotech 2008 CDROM
Nanotech 2007 CDROM
Nanotech 2006 CDROM
Nanotech 2005 CDROM
Nanotech 2004 CDROM
3 CDROM Special Offer
Nanotech 2008 Vol. 1
Nanotech 2008 Vol. 2
Nanotech 2008 Vol. 3
Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 2
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 4
Nanotech 2006 Vol. 1
Nanotech 2006 Vol. 2
Nanotech 2006 Vol. 3
Nanotech 2005 Vol. 1
Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 3
WCM 2005
Nanotech 2004 Vol. 1
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 3
Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 3
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 2
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 2
MSM 2000
MSM 99
MSM 98
Index of Authors
Index of Keywords
Index of Affiliations
Library Request Form
Shopping Cart
Order Form
 
Publications Publications
MSM 98
p
 
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
MSM 98
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
 
Chapter 14: Applications: Hall Effect, Storage
 

Analytical Study of Vertical Hall (VH)-Devices Using an Adapted Conform Mapping Technique

Authors:P.A. Besse, C. Schott and R.S. Popovic
Affilation:EPFL, Switzerland
Pages:660 - 665
Keywords:magnetic sensor, Hall-devices, conform mapping, geometry factor, series resistance
Abstract:We adapt the conforrn mapping technique to the analytical calculation of two dimensional vertical Hall (VH)-devices with five electrical contacts. With our new method the finite size of the two output current electrodes is taken into account. The mapping technique has been extended to VHdevices embeded in a well or in a guard-ring. Different cases, all based on a typical VH-device, have been studied to illustrate the potentialities of the method. We calculate the geometry factor, the series resistance as well as the current unbalan: between both output current electrodes. Such accurate alculations are especially requirec in order to understanl the efficient linearization schemes recently developed for such VH-devices.
Analytical Study of Vertical Hall (VH)-Devices Using an Adapted Conform Mapping TechniqueView paper
ISBN:0-96661-35-0-3
Pages:678
Hardcopy:$100.00
Special:3 CD Set — 15% off with Free Shipping
Up
Upcoming Events
Nanotech 2009
Cleantech 2009
BioNano 2009
TechConnect Summit
nanoPRwire™
nanoPRwire
News Headlines
nano World news
 
 
 
 
px
© Nano Science and Technology Institute     About NSTI | Terms of Use | Privacy Policy | Contact