Authors: L. Larcher and P. Pavan
Affilation: Università di Modena e Reggio Emilia, Italy
Pages: 738 - 741
Keywords: compact modeling, semiconductor device modeling, hot carrier effects, MOSFET, flash memory
This paper presents for the first time a new approach to hot-carrier phenomena leading to an analytical model of both Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) currents. This model can be incorporated in Spice-like models of MOS transistors and Floating Gate (FG) devices to include hot carrier phenomena also in circuit simulations.