A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 13: Compact Modeling
	A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling
Authors:	L. Larcher and P. Pavan
Affilation:	Università di Modena e Reggio Emilia, IT
Pages:	738 - 741
Keywords:	compact modeling, semiconductor device modeling, hot carrier effects, MOSFET, flash memory
Abstract:	This paper presents for the first time a new approach to hot-carrier phenomena leading to an analytical model of both Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) currents. This model can be incorporated in Spice-like models of MOS transistors and Floating Gate (FG) devices to include hot carrier phenomena also in circuit simulations.
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ISBN:	0-9708275-7-1
Pages:	764
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