A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling

Larcher L., Pavan P.
Università di Modena e Reggio Emilia, IT

Keywords: compact modeling, flash memory, hot-carrier effects, MOSFET, semiconductor device modeling

This paper presents for the first time a new approach to hot-carrier phenomena leading to an analytical model of both Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) currents. This model can be incorporated in Spice-like models of MOS transistors and Floating Gate (FG) devices to include hot carrier phenomena also in circuit simulations.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 738 - 741
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9708275-7-1