Present Status and Future Direction of BSIM SOI Model for High-Performance/Low-Power/RF Application
Authors:
S. Fung, P. Su and C. Hu
Affilation:
IBM Microelectronics, USA
Pages:
690 - 693
Keywords:
SOI, compact model, fully depleted, partially depleted, history effect
Abstract:
The recent progress of BSIM (Berkeley Short-channel IGFET Model) SPICE models extended for SOI transistors are reviewed. The models cover partially depleted (PD), fully depleted (FD) and dynamic depletion (FD) (automatically transition between PD and FD). The key concept of dynamic depletion will be discussed.
