Simulation Study of Non-Quasi Static Behaviour of MOS Transistors

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 13: Compact Modeling
	Simulation Study of Non-Quasi Static Behaviour of MOS Transistors
Authors:	D.V. Kumar, R.A. Thakker, M.B. Patil and V.R. Rao
Affilation:	Indian Institute of Technology - Bombay, IN
Pages:	742 - 745
Keywords:	look-up Table, non-quasi-static model, terminal charges, MOSFET, circuit simulation
Abstract:	In this paper, we study the 'non-quasi static' (NQS) behaviour of MOS transistors using an exact quasi static Look-up Table (LUT) [1] MOSFET model implemented in a general-purpose circuit simulator SEQUEL [2], device simulator ISE-TCAD [3] and SPICE BSIM3v3 [4] QS and NQS models. An NMOS transistor of channel length 2 um is simulated using LUT, ISE and SPICE3 and terminal currents are qualitatively studied. The method for extraction of terminal charges, which are required for circuit simulation using the LUT approach also presented.
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ISBN:	0-9708275-7-1
Pages:	764
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