Authors: X. Zhou
Affilation: Nanyang Technological University, Singapore
Pages: 710 - 714
Keywords: compact model, deep-submicron MOSFETs, parameter extraction, technology development, circuit simulation
This paper describes the ideas and philosophy behind a new compact model (CM) for deep-submicron MOSFETs, called Xsim, which has been developed from scratch over the past few years. Similarities to and differences from existing popular models are pointed out. The opinions on many controversial debates in the CM field are given. The ultimate goal of the CM development in the context of technology/circuit modeling and optimization is outlined.