Measurements and Modeling of Mobility in Ultra-Thin SOI

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 13: Compact Modeling
	Measurements and Modeling of Mobility in Ultra-Thin SOI
Authors:	M. Mastrapasqua, D. Esseni and C. Fiegna
Affilation:	Agere Systems, US
Pages:	734 - 737
Keywords:	SOI, mobility, ultra-thin SOI, fully depleted, quantization
Abstract:	We present a study of the effective mobility (ueff) of ultra thin SOI n MOSFETs for both single and double gate operation. Electron mobility was measured for silicon thickness Tsi down to approximately 5 nm using a special test structure able to circumvent parasitic resistance effects. At small inversion density, Ning, the mobility is clearly reduced for decreasing Tsi, due to enhanced phonon scattering in the thin quantum well. However, for double gate operation, DB, we found an improvement in the effective mobility when compared with single gate, SG, operation.
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ISBN:	0-9708275-7-1
Pages:	764
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