Authors: J.G. Fossum
Affilation: University of Florida, United States
Pages: 686 - 689
Keywords: physical compact model, predictive circuit simulation, Si MOSFETs, scaled CMOS.
A process/physics-based compact model (UFPDB), unified for PD/SOI and bulk-Si MOSFETs with a single small set of parameters, is overviewed. The utility of UFPDB, e.g., for benchmarking PD/SOI and bulk-Si CMOS and for projecting performances of scaled technologies, is demonstrated via UFPDB/Spice3 device/circuit simulations.