A Unified Process-Based Compact Model for Scaled PD/SOI and Bulk-Si MOSFETs
Authors:
J.G. Fossum
Affilation:
University of Florida, USA
Pages:
686 - 689
Keywords:
physical compact model, predictive circuit simulation, Si MOSFETs, scaled CMOS.
Abstract:
A process/physics-based compact model (UFPDB), unified for PD/SOI and bulk-Si MOSFETs with a single small set of parameters, is overviewed. The utility of UFPDB, e.g., for benchmarking PD/SOI and bulk-Si CMOS and for projecting performances of scaled technologies, is demonstrated via UFPDB/Spice3 device/circuit simulations.
