Authors: R. van Langevelde, A.J. Scholten, L.F. Tiemeijer, R.J. Havens and D.B.M. Klaassen
Affilation: Philips Research Laboratories, LN
Pages: 674 - 677
Keywords: RF-CMOS, compact modeling, noise, distortion, transit time, non-quasi-static, MOS Model 11
RF-CMOS applications impose increasingly stringent requirements on compact models used in circuit simulation. In this paper several of these issues will be addressed together with a discussion of the state-of-the-art of compact modelling.