Authors: C. Enz, M. Bucher, A.S. Porret, J.M. Sallese and F. Krummenacher
Affilation: Swiss Center for Electronics and Microtechnology, Switzerland
Pages: 666 - 669
Keywords: EKV MOS transistor, charge-based model
This paper presents the foundations that lead to the EKV MOS transistor compact model. It describes all the basic concepts required to derive the large-signal and smallsignal charge-based model that is valid in all modes of inversion, from weak to strong inversion through moderate inversion. The general small-signal model valid in quasistatic and non-quasi-static operation is also presented and all its components are described. It is also shown that the charge-based approach allows to derive the gm/ID characteristic that is valid in all modes of inversion.