 | Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 13: Compact Modeling |
| | The Foundations of the EKV MOS Transistor Charge-Based Model |
| Authors: | C. Enz, M. Bucher, A.S. Porret, J.M. Sallese and F. Krummenacher |
| Affilation: | Swiss Center for Electronics and Microtechnology, Switzerland |
| Pages: | 666 - 669 |
| Keywords: | EKV MOS transistor, charge-based model |
| Abstract: | This paper presents the foundations that lead to the EKV MOS transistor compact model. It describes all the basic concepts required to derive the large-signal and smallsignal charge-based model that is valid in all modes of inversion, from weak to strong inversion through moderate inversion. The general small-signal model valid in quasistatic and non-quasi-static operation is also presented and all its components are described. It is also shown that the charge-based approach allows to derive the gm/ID characteristic that is valid in all modes of inversion. |
 | View paper |
| ISBN: | 0-9708275-7-1 |
| Pages: | 764 |
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