Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Chapter 13:

Compact Modeling

-Challenges of Modeling VLSI Interconnects in the DSM Era
 N.D. Arora
 Simplex Solutions, US
-Detailed Comparison of the SP2001, EKV, and BSIM3 Models
 P. Bendix
 LSI Logic, US
-Standardization and Validation of Compact Models
 B. Brooks, K. Green, J. Krick, T. Vrotsos and D. Weiser
 Texas Instruments, US
-Overview of An Advanced Surface-Potential-Based MOSFET Model (SP)
 G. Gildenblat and T.L. Chen
 Pennsylvania State University, US
-Engineering BSIM for the Nano-Technology Era and Beyond
 M. Chan and C. Hu
 Hong Kong University of Science and Technology, HK
-The Foundations of the EKV MOS Transistor Charge-Based Model
 C. Enz, M. Bucher, A.S. Porret, J.M. Sallese and F. Krummenacher
 Swiss Center for Electronics and Microtechnology, CH
-The EKV 3.0 Compact MOS Transistor Model: Accounting for Deep-Submicron Aspects
 M. Bucher, C. Enz, F. Krummenacher, J.M. Sallese, C. Lallement, A.S. Porret
 National Technical University of Athens, GR
-RF Applications of MOS Model 11
 R. van Langevelde, A.J. Scholten, L.F. Tiemeijer, R.J. Havens and D.B.M. Klaassen
 Philips Research Laboratories, LN
-HiSIM: Self-Consistent Surface-Potential MOS-Model Valid Down to Sub-100nm Technologies
 M. Miura-Mattausch, H. Ueno, J.H. Mattausch, S. Kumashiro, T. Yamaguchi, K. Yamashita and N. Nakayama
 Hiroshima University, JP
-Starting Over: gm/Id-Based MOSFET Modeling as a Basis for Modernized Analog Design Methodologies
 D. Foty, D. Binkley and M. Bucher
 Gilgamesh Associates, US
-A Unified Process-Based Compact Model for Scaled PD/SOI and Bulk-Si MOSFETs
 J.G. Fossum
 University of Florida, US
-Present Status and Future Direction of BSIM SOI Model for High-Performance/Low-Power/RF Application
 S. Fung, P. Su and C. Hu
 IBM Microelectronics, US
-RF MOSFET Noise Parameter Extraction and Modeling
 M. Jamal Deen and C-H Chen
 McMaster University, CA
-CMOS RF Modeling and Parameter Extraction Approaches Taking Charge Conservation into Account
 M. Je, I. Kwon, J. Han, H. Shin and K. Lee
 Korea Advanced Institute of Science and Technology, KR
-Automatic Generation of RF Compact Models from Device Simulation - Part I: Motivation and methodology
 S. Luryi & A. Pacelli
 State University of New York at Stony Brook, US
-Xsim: A Compact Model for Bridging Technology Developers and Circuit Designers
 X. Zhou
 Nanyang Technological University, SG
-Unified Statistical Modeling for Circuit Simulation
 C. McAndrew and P.G. Drennan
 Motorola, US
-The Role of TCAD in Compact Modeling
 M. Duane
 Applied Materials, US
-Interconnect Modeling for High Speed Digital Circuits - the Role of RLC Coupling
 R. Suaya
 Mentor Graphics, FR
-How to Build an SOI MOSFET Compact Model without Violating the Laws of Physics
 J. Watts
 IBM Microelectronics, US
-Methodology for Model Generation with Accuracy from DC to RF
 X. Zhang, M. Williams and Z. Liu
 Celestry Design Technologies, US
-Measurements and Modeling of Mobility in Ultra-Thin SOI
 M. Mastrapasqua, D. Esseni and C. Fiegna
 Agere Systems, US
-A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling
 L. Larcher and P. Pavan
 Universit√† di Modena e Reggio Emilia, IT
-Simulation Study of Non-Quasi Static Behaviour of MOS Transistors
 D.V. Kumar, R.A. Thakker, M.B. Patil and V.R. Rao
 Indian Institute of Technology - Bombay, IN
-Compact Model for Manufacturing Design and Fluctuation Study
 K.Y. Lim and X. Zhou
 Chartered Semiconductor Manufacturing Ltd., SG
-Physically-Based Approach to Deep-Submicron MOSFET Compact Model Parameter Extraction
 S.B. Chiah, X. Zhou, K.Y. Lim, A. See and L. Chan
 Nanyang Technological University, SG
-New Compact Model for Generation Drain Current Transients in Weak and Moderate Inversions of Submicron Floating-Body PD SOI MOSFETs
 A.M. Ionescu and D. Munteanu
 Swiss Federal Institute of Technology (EPFL), CH
ISBN:0-9708275-7-1
Pages:764
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