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 | Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 11: Semiconductor Device Modeling |
| | The Role of the Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices | | Authors: | D. Vasileska, I. Knezevic, R. Akis and D.K. Ferry | | Affilation: | Arizona State University, USA | | Pages: | 556 - 559 | | Keywords: | MOSFETs, asymmetric device structures, space-quantization effect, threshold voltage degradation, on-state current degradation | | Abstract: | We investigate quantum-mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quan-tum-mechanical space-quantization effects along the growth direction gives rise to larger average displacement of the carriers from the semiconductor-oxide interface and reduced sheet electron density. This, in turn, leads to threshold voltage shift on the order of 150 to 200 mV, which affects the magnitude of the on-state current and gives rise to transconductance degradation. |  | View paper | | ISBN: | 0-9708275-7-1 |
| Pages: | 764 |
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