DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations
Authors:
B. Neinhus, C. Jungemann and B. Meinerzhagen
Affilation:
Universitat Bremen, Germany
Pages:
548 - 551
Keywords:
noise, device simulation, impact ionization
Abstract:
An e cient model for the simulation of terminal current noise in the presence of avalanche carrier generation is presented. Our approach is investigated by DD, HD, and MC noise simulations of a 1D N+NN+ structure. A comparison of the terminal current noise evaluated by the 2D HD and DD Langevin equations with full band Monte Carlo simulations exhibits excellent agreement between the MC and HD results.
