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 | Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 10: Quantum Effects, Quantum Devices and Spintronics |
| | Predictive Process Simulation and Ab-initio Calculation of the Physical Volume of Electrons in Silicon | | Authors: | W. Windl and M.S. Daw | | Affilation: | Ohio State University, USA | | Pages: | 494 - 497 | | Keywords: | semiconductor, stress-mediated diffusion, ab-initio calculations, electron size | | Abstract: | Recently, we have presented the development of a complete predictive simulation capability for the effects of general anisotropic nonuniform stress on dopant diffusion in silicon [M. Laudon, N. N. Carlson, M. P. Masquelier, M. S. Daw, and W. Windl, Appl. Phys. Lett. 78, 201 (2001)]. As a by-product of these calculations, we calculated a physical volume of 15 3 for electrons in Si from first-principles which is the topic of the present paper. It is argued that the physical electron volume that we have calculated for the silicon solid can be considered to represent a lower boundary for the effective size of semiconductor electrons that needs to be taken into account in quantum transport simulations. |  | View paper | | ISBN: | 0-9708275-7-1 |
| Pages: | 764 |
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