An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs
Authors:
R. Akis, S. Milicic, D.K. Ferry and D. Vasileska
Affilation:
Arizone State University, U.S.A.
Pages:
550 - 553
Keywords:
ultra-small MOSFETs, quantization, Monte Carlo simulation, SOI devices.
Abstract:
Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a simultaneous solution of the S
