A Model for Fully Depleted Double Gate SOI MOS Transistors Including Temperature Effects
Authors:
R. Gharabagi
Affilation:
St. Louis University, U.S.A.
Pages:
490 - 493
Keywords:
model, fully depleted double gate SOI MOS transistors, temperature effects
Abstract:
A model for a fully depleted double gate Silicon on Insulator (SOI) Metal Oxide Semiconductor (MOS) Transistors is presented. Small geometry effects such carrier velocity saturation, mobility degradation, and channel length modulation are included. Both l
