Nano Science and Technology Institute
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems

Chapter 10:

Semiconductor Device Modeling and Novel Structures Simulation

-Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs
 C. Sudhama, O. Spulber, C. McAndrew and R. Thoma
 Motorola SPS, US
-Spatial Modulation of the Dielectric Permittivity and its Effect on the Spectral Responsivity of Heterodimensional Photodetectors
 F. Castro and B. Nabet
 Motorola Laboratories, US
-Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs
 C. Jungemann, C.D. Nguyen, B. Neinhüs, S. Decker and B. Meinerzhagen
 Universitat Bremen, DE
-Impact of Non-Stationary Transport Effects on Realistic 50nm MOS Technology
 D. Munteanu, G. Le Carval and G. Guegan
 LETI, CEA/Grenoble, DMEL, FR
-A Qualitative Study on Global and Local Optimization Techniques for TCAD Analysis Tasks
 T. Binder, C. Heitzinger and S. Selberherr
 Technical University Wien, AT
-3-D Simulation and Modeling of Signal Isolation in RF/IF Circuits
 S. Bharatan, P. Welch, K.H. To, R. Thoma and M. Huang
 Motorola, Digital DNA Laboratories, US
-A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation
 T. Grasser, H. Kosina, M. Gritsch and S. Selberherr
 TU Wien, AT
-Substrate Current Simulations at Elevated Temperatures
 E. Lyumkis, R. Mickevicius, B. Polsky, G. Loechelt, A. Zlotnicka and R. Thoma
 Integrated Systems Engineering, Inc., US
-A Scalable RF Model of the Metal-Oxide-Metal (MOM) Capacitor
 G. Chunqi, D. Manh Anh, Z. Zheng and F. Boyland
 Chartered Semiconductor Manufacturing Ltd., SG
-Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET’s
 S.B. Chiah, X. Zhou, K.Y. Lim, Y. Wang, A. See and L. Chan
 Nanyang Technological University, SG
-A Model for Fully Depleted Double Gate SOI MOS Transistors Including Temperature Effects
 R. Gharabagi
 St. Louis University, US
-A Simplified Approach for Noise Parameter Transformation Between Common Emitter and Common Base InP DHBT
 Y.Z. Xiong, G.I. Ng, H. Wang, C.L. Tan and H. Yang
 Nanyang Technological University, SG
-Using ‘Adaptive Resurf’ Technique and Field Plate Working to Improve the Safe Operating Area of n-type Drain Extended MOS Transistors
 B. Bakeroot, P. Moens, M. Vermandel and J. Doutreloigne
 University of Gent, BE
-Broadband Millimeter Wave Finline Antenna Simulation and Performance
 J.S. Fu, C.L. Ng, Y. Kwang, E.K. Sia and C. Lu
 Nanyang Technological University, SG
-Three-Dimensional Simulation of AlxGa1-xAs/GaAs Gradual Heterojunction Bipolar Transistor
 A.J. García-Loureiro, T.F. Pena, J.M. Lopez-González and Ll. Prat Viñas
 Univ. Santiago de Compostela, ES
-Simulation of Recess-Structure Dependence of Gate-Lag Phenomena in GaAs MESFETs
 K. Horio, Y. Mitani and A. Wakabayashi
 Shibaura Institute of Technology, JP
-Determination of Low-Frequency Noise Spectrum in Ion-sensitive Field Effect Transistors (ISFET's) Based on a Physical Model for Drift
 S. Jamasb, S.D. Collins and R.L. Smith
 Conexant Systems, US
-TCAD Modeling using a Neural Network Based Approach
 R. Matei, G. Dima and M.D. Profirescu
 University Politehnica of Bucharest, RO
-Modeling of Antipodal/BCSSS Transition for Millimeter Wave Finline High Q Local Injected Mixer
 E.K. Sia, J.S. Fu, C. Lu and S.H. Tan
 Nanyang Technological University, SG
-Investigation of the Mechanism of Floating Node Assisted CMOS Latch-Up
 S-P. Sim, P. Guo, A. Kordesch, W.F. Chen, C-M. Liu, C.Y. Yang and K. Lee
 Santa Clara University, US
-Noise Modelling of Microwave Bipolar Transistors
 F. Patti, V. Miceli and B. Spagnolo
 Università di Palermo, IT
-A New Approach for the Extraction of Threshold Voltage for MOSFET’s
 J.S. Wong, J.G. Ma, K.S. Yeo and M.A. Do
 Nanyang Technological University, SG
-Parallel Dynamic Load Balancing for Semiconductor Device Simulations on a Linux Cluster
 Y. Li, S-S. Lin, S-M. Yu, J-L. Liu, T-S. Chao and S.M. Sze
 National Chiao Tung University, TW
-Simulation of HgCdTe Double Layer Heterojunction Detector Devices
 G.T. Hess, T.J. Sanders, G. Newsome and T. Fischer
 Florida Institute of Technology, US
-A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using an Analytical Model
 Y. Chen and J. Luo
 University of California Berkeley, US
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