Nano Science and Technology Institute - NSTI  
Nano Science and Technology Institute   Home | Subscribe | Site Map  
  ABOUT | COURSES | EVENTS | PUBLICATIONS | LEADERSHIP | OUTREACH | NEWS | PRESS | JOBS | Nanotechnology Solutions
px
px fade_top
Publications
Nanotech 2008 CDROM
Nanotech 2007 CDROM
Nanotech 2006 CDROM
Nanotech 2005 CDROM
Nanotech 2004 CDROM
3 CDROM Special Offer
Nanotech 2008 Vol. 1
Nanotech 2008 Vol. 2
Nanotech 2008 Vol. 3
Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 2
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 4
Nanotech 2006 Vol. 1
Nanotech 2006 Vol. 2
Nanotech 2006 Vol. 3
Nanotech 2005 Vol. 1
Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 3
WCM 2005
Nanotech 2004 Vol. 1
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 3
Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 3
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 2
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 2
MSM 2000
MSM 99
MSM 98
Index of Authors
Index of Keywords
Index of Affiliations
Library Request Form
Shopping Cart
Order Form
 
Publications Publications
MSM 2000
p
 
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems

Chapter 9:

Signal Integrity Simulation and Verification

-Inductance Calculation in Interconnect Structures
 C. Harlander, R. Sabelka and S. Selberherr
 Technical University of Vienna, Austria
-Influence of Element Size on the Precision and Required Computational Effort for 3D FEM Interconnect Capacitance Simulations of ULSI DRAM Cells
 A. Hieke
 Infineon Technologies Corporation, U.S.A.
-Hybrid P-Element and Trefftz Method for Capacitance Computation
 M. Gyimesi, J-S. Wang and D.F. Ostergaard
 ANSYS, Inc., U.S.A.
-Wavelet Based Matrix Compression in Numerical Micromagnetics
 T. Schrefl, D. Süss and J. Fidler
 Vienna University of Technology, Austria
-Transient Simulation of Ferroelectric Hysteresis
 K. Dragosits, R. Hagenbeck and S. Selberherr
 Technical University of Vienna, Austria
-A Methodology for Modeling a Complex Geometry on Wafer from a Layout Data
 S. Yoon, O. Kwon and T. Won
 Inha University, Korea
ISBN:0-9666135-7-0
Pages:741
Hardcopy:$100.00
Special:3 CD Set — 15% off with Free Shipping
Up
nanoPRwire™
nanoPRwire
News Headlines
nano World news
 
 
 
 
px
© Nano Science and Technology Institute     About NSTI | Terms of Use | Privacy Policy | Contact