 | MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Chapter 8: Semiconductor Device Modeling |
| | Inverse Modeling for C-V Profiling of Modulated-Doped Semiconductor Structures |
| Authors: | M.F. Kokorev, N.A. Maleev and D.V. Pakhnin |
| Affilation: | State Electrotechnical University, Russia |
| Pages: | 392 - 395 |
| Keywords: | inverse modeling, C-V profiling, modulated- doped semiconductor structures |
| Abstract: | Inverse modeling is a way for the verification of device models and for the parameter extraction. A technique of doping profile extraction of semiconductor structures based on the capacitance-voltage measurements (or C-V profiling) is used extensively. This technique up till now has been applied in two variants: the well-known classical C-V profiling to the sufficiently smooth doping profiles and the inverse modeling technique based on the error minimization to the abrupt profiles. The present paper describes a new method of the inverse modeling with sub-Debye resolution for arbitrary doping profiles. The calculations can be performed using a Pentium-like personal computer. For the input data obtained by forward modeling, the integral error of doping profile extraction is below 0.1 %. As an example, the doping profile determination of the GaAs modulated-doped structure is presented. The possibilities of the proposed method are discussed. |
 | View paper |
| ISBN: | 0-9666135-7-0 |
| Pages: | 741 |
| Hardcopy: | $100.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
| Up | |
