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 | MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Chapter 8: Semiconductor Device Modeling |
| | Tunneling-Assisted Currents in n+p+ Amorphous Silicon Junctions | | Authors: | J. Furlan and Z. Gorup | | Affilation: | University of Ljubljana, Slovenia | | Pages: | 352 - 355 | | Keywords: | amorphous silicon, pn junction, tunneling currents | | Abstract: | A theoretical model for the tunneling transport of charge carriers in forward-biased heavily doped amorphous silicon pn junctions was recently presented. In this paper, in addition to current-voltage characteristics in the forward direction, reverse-voltage characteristics are calculated and compared to the measured characteristics. The trap-assisted tunneling transport of carriers is described in terms of tunneling factor G, which can be treated as an effective increase in the apparent capture cross-section of carriers. Crucial factors affecting highly enhanced recombination-generation currents due to tunneling-assisted capture-emission and to potential barrier-lowering (Poole-Frenkel effect) at forward and reverse bias are discussed. |  | View paper | | ISBN: | 0-9666135-7-0 |
| Pages: | 741 |
| Hardcopy: | $100.00 |
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