K-M.S. Chan, N-C.A. Wong, C-J. Chao, D-B. Kao, S-C. Wong and C.Y. Yang
Affilation:
Winbond Electronics Corporation America, U.S.A.
Pages:
345 - 347
Keywords:
continuous model, deep submicron, MOSFET
Abstract:
A 1-D model is developed to account for mobile charges in the Source/Drain junction regions of a MOSFET. 2-D effects such as Threshold Roll-off and Drain Induced Barrier Lowering are accounted for with an empirical function G constructed by fitting our equations to measured data. The model is scalable, and only one round of fitting to measured data is needed for each process technology. The resulting drain current is continuous over the entire operating range of the transistor.
