Nano Science and Technology Institute
MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems

Chapter 7:

Compact Modeling for Deep Submicron Devices

-Verilog-AMS Eases Mixed Mode Signal Simulation
 I. Miller and T. Cassagnes
 Motorola ESD Europe, US
-A Novel Method for the De-Embedding of S-Parameters of Double Heterojunction d-doped PHEMTs - Modeling and Measurements
 R.V.V.V.J. Rao, J. Joe, Y.W.M. Chia, K.S. Ang, H. Wang and G.I. Ng
 National University of Singapore, SG
-Modeling of On-Chip Simultaneous Swithcing Noise in VDSM CMOS Circuits
 K.T. Tang and E.G. Friedman
 University of Rochester, US
-Modeling of Threshold Voltage with Reverse Short Channel Effect
 K.Y. Lim, X. Zhou and Y. Wang
 Nanyang Technological University, SG
-Behavioral Models and Specific Design Tool for New Power Integrated Devices
 T. Bordingnon, J.L. Sanchez, P. Austin and V. Houdbert
-Improved Prediction of Length/Temperature-Dependent Impact Ionization Induced Body Current Based on an Accurate Saturation Drain Voltage Model
 S.H.L. Seah, K.S. Yeo, J.G. Ma and M.A. Do
 Nanyang Technological University, SG
-Analytical Results for the Current-Voltage Characteristics of an SOI-MOSFET
 H.C. Morris, E. Cumberbatch, T. Phillips and B. Hinderberger
 Claremont Graduate University, US
-A Novel Approach to Compact I-V Modeling for Deep-Submicron MOSFET's Technology Development and Circuit Simulation
 X. Zhou and K.Y. Lim
 Nanyang Technological University, SG
-Automatic Generation of Equivalent Circuits from Device Simulation
 A. Pacelli, M. Mastrapasqua, M.A. Alam and S. Luryi
 Bell Laboratories, Lucent Technologies, US
-Genetic Algorithm Based MOSFET Model Parameter Extraction
 M. Keser and K. Joardar
 Motorola SPS, US
-A New Continuous Model for Deep Submicron MOSFETs
 K-M.S. Chan, N-C.A. Wong, C-J. Chao, D-B. Kao, S-C. Wong and C.Y. Yang
 Winbond Electronics Corporation America, US
-Mobility Degradation and Current Loss Due to Vertical Electric Field in Channel Area of Submicron MOS Devices
 A.A. Keshavarz, J.L. Walters and R. Sampson
 STMicrolectronics, US
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